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采用磁控溅射方法制备分别以Ta和NiFeCr为缓冲层的Ta(NiFeCr)/NiFe/Ta薄膜材料.对于相同厚度的NiFe薄膜,与传统材料Ta相比,用NiFeCr作缓冲层薄膜的各向异性磁电阻有显著的提高.X射线衍射结果表明,与Ta缓冲层相比NiFeCr缓冲层可以诱导更强的NiFe(111)织构.高分辨透射电子显微镜结果表明,NiFeCr缓冲层和NiFe层的晶格匹配非常好,NiFe沿着NiFeCr外延生长,以NiFeCr为缓冲层的NiFe薄膜具有良好的晶体结构.对薄膜进行热处理,以NiFeCr缓冲层为缓冲薄膜的各向异性磁电阻值在350℃以下基本保持不变,当退火温度超过350℃后,其值会明显下降.以NiFeCr缓冲层的薄膜在350℃以下退火具有良好的热稳定性.
The Ta (NiFeCr) / NiFe / Ta thin films with Ta and NiFeCr as buffer layers were prepared by magnetron sputtering method. For the same thickness of NiFe thin films, compared with the traditional material Ta, X-ray diffraction results show that NiFeCr buffer layer can induce stronger NiFe (111) texture than Ta buffer layer.High-resolution transmission electron microscopy results show that NiFeCr buffer layer and NiFe layer Lattice matching is very good, NiFe epitaxial growth along NiFeCr, NiFeCr NiFe buffer layer has a good crystal structure.The film is heat treated with NiFeCr buffer layer as a buffer film anisotropic magnetoresistance value below 350 ℃ The results show that the NiFeCr thin films annealed at 350 ℃ have good thermal stability when the annealing temperature exceeds 350 ℃.