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以InCl3·4H2O为原料,采用溶胶-凝胶技术、浸渍-涂布法制备了In2O3薄膜。同时对薄膜厚度与In2O3含量、涂布液粘度以及提拉速度等关系进行研究,发现薄膜厚度与涂布液粘度、提拉速度成对数线性关系。膜厚与提拉速度的关系式为t≈v0.62。XRD、IR测试表明经过400℃煅烧,PVA已经完全排除。SEM照片表明薄膜形貌平整、光亮,从而为该种材料制作实用的气敏元件打下了良好的基础。
Using InCl3 · 4H2O as raw material, In2O3 thin films were prepared by sol-gel technique and dip-coating method. At the same time, the relationship between the film thickness and the In2O3 content, the viscosity of the coating solution and the pulling speed were studied. It was found that the relationship between the film thickness and the viscosity and the pulling speed of the coating solution became a logarithmic linear relationship. The relation between the film thickness and the pulling speed is t≈v0.62. XRD, IR test showed that after 400 ℃ calcination, PVA has been completely ruled out. The SEM photographs show that the film has a smooth and bright film shape, which lays a good foundation for the practical production of gas sensing materials.