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在半导体器件和集成电路中,需要应用多种金属薄膜和介质薄膜,金属膜用作器件内部电极的欧姆接触和延伸引出,集成电路各组元件之间的低电阻连接等。介质膜用作集成电路中多层布线的介质绝缘等。这些薄膜一般都采用真空淀积的方法制作。因为此淀积过程在真空中进行,可以得到器件所需要的高纯膜,也可避免器件表面被沾污。同时,淀积可以在低温下实现,因此,淀积过程不至引起器件内部结构的变化。一般地说,真空淀积可分成蒸发和溅射两种不同的方法。
In semiconductor devices and integrated circuits, a variety of metal films and dielectric films are required. Metal films are used for ohmic contact and extension of the internal electrodes of the device, and low resistance connections between the various elements of the integrated circuit. Dielectric film used as a multi-layer integrated circuit dielectric and other wiring. These films are generally produced by vacuum deposition. Because this deposition process is carried out in a vacuum, the high purity membrane required for the device can be obtained and the surface of the device can be protected from contamination. At the same time, the deposition can be achieved at low temperatures, so the deposition process does not cause changes in the internal structure of the device. In general, vacuum deposition can be divided into two different evaporation and sputtering methods.