报道了微波低噪声异质结赝配HEMT的研究结果。以半绝缘GaAs为衬底,用MBE方法生长异质结材料。采用低应力、低损伤工艺程序,以AuGeNi/Au形成源漏欧姆接触,Al形成栅肖特基势垒接触,聚酰亚胺介质为钝化膜,制成了InGaAs/AlGaAs赝配HEMT。其直流跨导为280mS/mm,在12GHz下,器件最小噪声系数为0.68dB,相关增益为7.0dB。 The research results of microwave low-noise heterojunction pseudochip HEMT are reported. Using semi-insulating GaAs as substrate, the heterojunction material is grown by MBE method. A low-stress, low-damage process was used to form source-drain ohmic contacts with AuGeNi / Au, gate-Schottky barrier contacts with Al, and passivation films with polyimide media to form InGaAs / AlGaAs pseudomorphic HEMTs. Its direct current transconductance is 280mS / mm, the minimum noise figure of the device is 0.68dB at 12GHz, the relevant gain is 7.0dB.