【摘 要】
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Dear editor,rnMemristors,resistive random access memory (RRAM) de-vices when used in memory applications,have attracted sig-nificant interest recently as a promising candidate for neuro-morphic computing systems due to their excellent size scala-bility,fa
【机 构】
：
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese
论文部分内容阅读
Dear editor,rnMemristors,resistive random access memory (RRAM) de-vices when used in memory applications,have attracted sig-nificant interest recently as a promising candidate for neuro-morphic computing systems due to their excellent size scala-bility,fast switching speed and low energy consumption[1].In order to obtain high learning accuracy in neural networks based on back propagation learning rule,the updating be-havior of synaptic linear symmetric weights is important[2].During weight update,the resistance of the memristor de-vice can be adjusted incrementally by controlling the dis-tribution of oxygen vacancies,which modulate the overall conductance of the device.
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