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硅中掺杂三价稀土离子Er给出1.54μm波段的近红外发光的研究受到人们的重视.这一方面由于这一发射波段恰好落在石英光纤的最低损耗波段;另一方面由于硅器件集成工艺的成熟与完善为光电集成提供了坚实的技术基础.近来人们研究发现,Si中的氧杂质对增强离子注入Er~(3+)的发光有利,同时发现其它一些电负性较大,质量较轻的负离子也会增强Er~(3+)的发光.本文研究了Si中离子注入Er和氧的发光特性,首次报道了氧离子单一注入Si在1.60μm附近存在一宽带发射,并且讨论了Er、氧共注入Si中氧对Er~(3+)发光的影响.
The research on the near-infrared luminescence in the 1.54μm band by doping the rare earth ions Er in silicon has attracted much attention due to the fact that the emission band falls precisely on the lowest loss band of the silica fiber. On the other hand, The maturity and perfection of the technology provide a solid technical basis for optoelectronic integration.Recently, it has been found that the oxygen impurity in Si is beneficial to increase the luminescence of Er 3+ ions implanted in Si, and at the same time, it is found that other electronegativity is larger and the mass The lighter anion also enhances the luminescence of Er ~ (3+) .In this paper, the luminescent properties of Er and oxygen ions implanted into Si were studied. It was first reported that there was a broadband emission near Si of 1.60μm with single ion implantation of oxygen ions. Effect of Oxygen Implanted with Oxygen on Luminescence of Er ~ (3+) in Si Oxygen.