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利用程序升温电导法（ＴＰＥＣ）和程序升温还原法（ＴＰＲ），研究比较了还原气氛下Ｐｔ／ＭｏＯ_３和Ｐｔ／Ｃｏ_３Ｏ_４体系中不同类型的半导体氧化物和吸附氢之间电荷和物种交换的规律．发现微量Ｐｔ通过吸附解离Ｈ_２成为原子氢，在较低温度下大大加快ｎ型半导体氧化物ＭｏＯ_３和氢之间电子传递速度，显著地降低ＭｏＯ_３的还原温度，但在同样条件下却不能有效地活跃ｐ型半导体氧化物Ｃｏ_３Ｏ_４和氢之间的电子传递，因而不能明显地促进Ｃｏ_３Ｏ_４的还原．导致此现象的原因，可能与不同类型的半导体导电机构不同而引起的对氢的敏感程度不同有密切关系．
The temperature-programmed conductance (TPEC) and temperature-programmed reduction (TPR) were used to study the charge and species exchange between different types of oxides and adsorbed hydrogen in Pt / MoO 3 and Pt / Co 3 O 4 systems under reducing atmosphere. It is found that trace Pt dissociates H 2 to atomic hydrogen by adsorption and greatly accelerates the electron transfer rate between the n-type oxide semiconductor MoO 3 and hydrogen at a relatively low temperature, thereby remarkably reducing the reduction temperature of MoO 3 but not effectively under the same conditions The electron transfer between the active p-type semiconductor oxide Co_3O_4 and hydrogen is active, and thus the reduction of Co_3O_4 can not be significantly promoted. The cause of this phenomenon may be different with different types of semiconductor conductive mechanism caused by the hydrogen sensitivity is closely related to different levels.