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工艺实践表明,采用体硅湿法刻蚀工艺加工压阻式微型压力传感器时,敏感膜片会存在厚度偏差,电阻条偏离应力最大区域导致位置偏差,电阻条偏离期望的[110]晶向造成角向偏差。结合工艺实验并借助有限元法分析了上述几种主要工艺偏差对灵敏度、线性度等性能的影响。研究表明,2μm的厚度偏差会使灵敏度下降大约10%,线性度会明显下降;位置偏差会使敏感元件偏离应力最大区域而降低灵敏度;5°的电阻条角向偏差会使灵敏度下降大约3%。相关研究可为最大程度减小工艺偏差的影响提供参考依据。
The process practice shows that when the piezoresistive miniature pressure sensor is processed by the bulk silicon wet etching process, the thickness of the sensitive diaphragm may vary. The deviation of the resistance bar from the maximum stress area results in the position deviation, and the resistance bar deviates from the desired [110] crystal orientation Angle deviation. Combined with the process experiment and the finite element method, the influence of several major process deviations on the sensitivity, linearity and other properties was analyzed. The study shows that the deviation of thickness of 2μm will reduce the sensitivity by about 10% and the linearity will obviously decrease. The position deviation will reduce the sensitivity of the sensitive element away from the maximum stress region. The deviation of the 5 ° resistance bar will decrease the sensitivity by about 3% . The related research can provide reference for minimizing the influence of process deviation.