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通过优化Mg流量增强了MOCVD生长的GaN薄膜的p型电导并改善了晶体质量.Hall测量结果表明空穴浓度首先随着Mg流量的升高而升高,达到极大值后开始降低;迁移率始终随Mg流量的升高而降低.最优的样品在室温下空穴浓度达到4.1×1017cm-3,电阻率降至1Ω.cm.考虑施主型缺陷MGaVN的自补偿作用,计算了空穴浓度随掺杂浓度变化的曲线关系.计算结果表明自补偿系数随掺杂浓度的增大而增大;空穴浓度首先随掺杂浓度的增大而增加,在受主浓度为NA≈4×1019左右时达到极大值,之后随着掺杂浓度的增大而迅速降低.XRD数据表明在实验范围内晶体缺陷密度随着掺杂浓度的降低而降低.
The p-type conductance of GaN films grown by MOCVD is enhanced and the crystal quality is improved by optimizing the Mg flow rate.The results of Hall measurement show that the hole concentration first increases with the increase of Mg flow rate and then decreases after reaching the maximum value. The mobility Which always decreases with the increase of Mg flow rate.The optimum sample has a hole concentration of 4.1 × 10 17 cm -3 at room temperature and a resistivity of 1 Ω · cm.Considering the self-compensation effect of donor-type defect MGaVN, the hole concentration The results show that the self-compensation coefficient increases with the increase of doping concentration. The hole concentration firstly increases with the doping concentration increasing. When the acceptor concentration is NA≈4 × 1019 And reached a maximum at about the same time, then decreased rapidly with the increase of the doping concentration.The XRD data showed that the density of crystal defects decreased with the decrease of doping concentration in the experimental range.