Spinel(001)-orientated Mn_3O_4 thin films on Nb-doped SrTiO_3(001) substrates are fabricated via the pulsed laser deposition method.X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial film is well crystallized.In the film plane the orientation relationship between the film and the substrate is[100]Mn_3O_4[110]Nb-doped SrTiO_3.After an electroforming process,the film shows bipolar nonvolatile resistance switching behavior.The positive voltage bias drives the sample into a low resistance state,while the negative voltage switches it back to a high resistance state.The switching polarity is different from the previous studies.The complex impedance measurement suggests that the resistance switching behavior is of filament type.Due to the performance reproducibility and state stability,Mn_3O_4 might be a promising candidate for the resistive random access memory devices. Spinel (001) -orientated Mn_3O_4 thin films on Nb-doped SrTiO_3 (001) substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial film is well crystallized. In the film plane the orientation relationship between the film and the substrate is [100] Mn_3O_4 [110] Nb-doped SrTiO_3.After an electroforming process, the film shows bipolar nonvolatile resistance switching behavior. The positive voltage bias drives the sample into a low resistance state, while the negative voltage switches it back to a high resistance state. the switching polarity is different from the previous studies. The complex impedance measurement suggests that the resistance switching performance and state stability, Mn_3O_4 might be a promising candidate for the resistive random access memory devices.