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为进一步揭示硫系玻璃基掺Er3+微结构光纤作为中红外光纤放大器增益介质的可行性,数值求解了800 nm泵浦波长下Ga5Ge20Sb10S65硫系玻璃基掺Er3+微结构光纤中Er3+离子数速率方程和光功率传输方程组,理论研究了4.5μm波段中红外信号的放大特性。结果显示,Ga5Ge20Sb10S65硫系玻璃基掺Er3+微结构光纤具有较高的信号增益和很宽的增益谱。在50 cm光纤长度上,最大信号增益超过了40 dB,高于30 dB信号增益的放大带宽达到了280 nm(4 420~4 700 nm)。同时,进一步研究分析了4 500 nm波长信号增益与光纤长度、信号输入功率和泵浦功率的关系。研究表明,Ga5Ge20Sb10S65硫系玻璃基掺Er3+微结构光纤是一种理想的可应用于4.5μm波段中红外宽带放大器的增益介质。
To further reveal the feasibility of using sulfur-doped glass-based Er3 + -doped microstructured fibers as the gain medium for the mid-infrared fiber amplifier, the numerical solution of the Er3 + number rate equation and the optical power of Ga5Ge20Sb10S65 doped chalcogenide- Transmission equations, the theoretical study of the 4.5μm band mid-infrared signal amplification characteristics. The results show that Ga5Ge20Sb10S65 chalcogenide glass doped Er3 + microstructured fiber has high signal gain and wide gain spectrum. At 50 cm fiber length, the maximum signal gain exceeds 40 dB and the amplification bandwidth above 30 dB signal gain reaches 280 nm (4 420-4 700 nm). At the same time, the relationship between signal gain and fiber length, signal input power and pump power of 4 500 nm wavelength is further studied and analyzed. The research shows that the Ga5Ge20Sb10S65 chalcogenide glass-based Er3 + -doped microstructured fiber is an ideal gain medium that can be applied to the mid-infrared broadband amplifier in the 4.5μm band.