—、光刻的最小线宽在集成电路制造中,光刻的最小线宽如下:(1)接触、接近式光刻(1)W_(mn)≈(?)式中,W_(min)为最小线宽;λ为曝光光源波长.z 为掩模和胶底(即胶和衬底界面)之间的距离.(单位均为μm).(2)投影光刻W_(min)=β(λ)/(NA) (2)式中.NA 为光学系统的数字孔径;β为经验常数,它由所用的胶和光刻工艺容差决定.一般在0.5-1.0之间.若按经典 -, the minimum line width of lithography in integrated circuit manufacturing, lithography minimum line width is as follows: (1) contact, proximity lithography (1) W_ (mn) ≈ (?) Where, The minimum line width; λ is the wavelength of the exposure light source, z is the distance between the mask and the glue base (ie, the glue and the substrate interface) (units are μm) (2) projection lithography W min = λ) / (NA) (2) where NA is the numerical aperture of the optical system, β is the empirical constant, which is determined by the tolerance of the glue and photolithography used, typically between 0.5 and 1.0,