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硅基的光电子集成以及光集成将满足未来信息传输处理的要求。目前制作硅基激光器的方法主要分为两类 ,异质结外延生长和异质材料键合。键合方法克服了异质结外延生长不可避免的晶格失配和材料热膨胀系数非共容性的缺点 ,它可以将具有直接带隙结构的半导体材料(如Ⅲ -Ⅴ族材料 )键合到硅片上 ,从而制作出硅基键合激光器件。特别是近年来发展起来的低温 (小于 50 0℃ )直接键合技术 ,使发光器件与微电子器件的硅基混合光电集成成为可能。
Silicon-based optoelectronic integration and optical integration will meet the requirements of future information transfer processing. The current method of making silicon-based lasers can be divided into two categories, heterojunction epitaxial growth and heterogeneous material bonding. The bonding method overcomes the inevitable lattice mismatch of heterojunction epitaxial growth and the disadvantage of non-coexistence of the coefficient of thermal expansion of the material, which can bond a semiconductor material with a direct band gap structure (such as a Group III-V material) Silicon wafer, thereby producing a silicon-based bonded laser device. Especially in recent years, the development of low temperature (less than 50 ℃) direct bonding technology, the light-emitting devices and microelectronic devices silicon-based hybrid optoelectronics possible.