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Low-frequency and high-frequency Capacitance-Voltage(C-V) curves of Metal-Oxide-Semiconductor Capacitors(MOSC),including electron and hole trapping at the dopant donor and acceptor impurities,are presented to illustrate giant trapping capacitances,from>0.01C_(ox) to>10C_(ox).Five device and materials parameters are varied for fundamental trapping parameter characterization,and electrical and optical signal processing applications.Parameters include spatially constant concentration of the dopant-donor-impurity electron trap,N_(DD),the ground state electron trapping energy level depth measured from the conduction band edge, E_C—E_D,the degeneracy of the trapped electron at the ground state,g_D,the device temperature,T,and the gate oxide thickness,x_(OX).
Low-frequency and high-frequency Capacitance-Voltage (CV) curves of Metal-Oxide-Semiconductor Capacitors (MOSC), including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from> 0.01C_ (ox) to> 10C_ (ox) .Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parametrics include spatially constant concentration of the dopant-donor-impurity electron trap, , the ground state electron trapping energy level depth measured from the conduction band edge, E_C-E_D, the degeneracy of the trapped electron at the ground state, g_D, the device temperature, T, and the gate oxide thickness, x_ (OX).