离子注入在硅半导体器件中的应用最早,1970年以前,一般都处于研究阶段,注入设备都是借用核子研究用的加速器。1970年以后在硅器件中的应用逐步成熟,开始出现半导体专用离子注入设备。逐步成为和扩散工艺相互补充的工艺手段。原则上讲,几乎所有的硅半导体器件均能用离子注入工艺制造,但实际上目前主要还是用于MOS集成电路,微波晶体管、微波二极管以及线性电路中大阻值电阻等。 Ion implantation is the earliest used in silicon semiconductor devices. Before 1970, it was generally in the research stage. All injection devices borrowed the accelerator for nuclear research. After 1970, the application of silicon devices gradually mature, began to appear dedicated semiconductor ion implantation equipment. Gradually become and diffusion process complement each other means. In principle, almost all of the silicon semiconductor devices can be manufactured by ion implantation process, but in fact, mainly for MOS integrated circuits, microwave transistors, microwave diodes and linear resistors in the circuit resistance.