论文部分内容阅读
IMEC研究机构比较了一种平面晶体管以及两种FinFET垂直结构晶体管,测试其在尺寸微缩能力以及工艺变差控制方面的表现。参与比较的是分别基于三种晶体管结构的六晶体管SRAM单元及阵列。IMEC由此得出的结论是,对SRAM类产品来说,FinFET器件在工艺变差控制方面以及产品良率方面要优于平面结构CMOS。
IMEC Research compared a planar transistor with two FinFET vertical structure transistors to test its performance in terms of size reduction and process variation control. Participate in the comparison are based on three transistor structure of the six transistor SRAM cells and arrays. IMEC concluded that FinFET devices outperform planar CMOS in terms of process variation and product yield for SRAM-based products.