【摘 要】
：
Nanodot arrays were formed on Si(110) surface under normal-incident Ar+ ion sputtering at substrate temperature of 800 ℃.Theion flux was 20μA/cm2, and the ion
【机 构】
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Department of Optical Science and Engineering and State Key Laboratory for Advanced Photonic Materia
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Nanodot arrays were formed on Si(110) surface under normal-incident Ar+ ion sputtering at substrate temperature of 800 ℃.Theion flux was 20μA/cm2, and the ion energies were 1-5keV.The surface was imaged by an atomic force microscope (AFM).It was found that with the increasing ion energy, the average ellipticity of the dots changes in an oscillating manner; meanwhile the average dot size increases monotonously.Based on a dynamic continuum model, and taking into consideration the asymmetry of the Ehrlich-Schwoebel diffusions along the and crystallographic directions, we carry out the simulations, which reproduce the experimental results qualitatively.
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