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探讨了电弧等离子体气相反应合成的SiC超细粉主要组分及杂质的分析方法,总硅-高氯酸脱水重量法,总碳-高频感应红外吸收法,游离硅-逸氢热导法,游离碳-差热电位滴定法,氯-原子吸收法,金属杂质-ICP法,氧-程序升温红外检测,并用AES和FT-IR作粉体表面氧分析。根据碳、硅和氧的状态分析结果,拟订出正确评估SiC纯度的方法。对超细粉放置增氧机制作了探讨。
The main components and impurities of SiC ultrafine powder synthesized by arc plasma gas phase reaction were discussed. The total silicon - perchloric acid dehydration gravimetric method, total carbon - high frequency induction infrared absorption method, free silicon - , Free carbon - differential thermal titration, chlorine - atomic absorption spectrometry, metal impurity - ICP method, oxygen - temperature programmed infrared detection, and AES and FT-IR powder surface oxygen analysis. Based on the results of state analysis of carbon, silicon and oxygen, a method of correctly evaluating the purity of SiC was developed. The superfine powder placed aeration mechanism was discussed.