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把氢化的无定形硅淀积在单晶硅的 p-n 结上,比起现代技术水平的热氧化物钝化剂的性能来,能使其漏电流减小两个数量级。
The deposition of hydrogenated amorphous silicon on the p-n junction of single crystal silicon can reduce its leakage current by two orders of magnitude compared to the performance of state of the art thermal oxide deactivators.