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本文从a—Si∶H的材料特性出发,采用更为精确的a—Si∶H带隙态分布模型计算了a—Si∶HCCD的转移特性,得出了a—Si∶H材料参数对a—Si∶HCCD的动态特性影响的数值分析结果.理论结果表明,a—Si∶H材料带隙中的局域态分布对a—Si∶HCCD的转移特性有非常大的影响.而且在高频下,a-Si∶H中的带尾态对a—Si∶HCCD转移特性的影响比深局域态要大.
Based on the material properties of a-Si: H, a-Si:H band gap distribution model is adopted to calculate the transfer characteristics of a-Si: The results of numerical analysis of the influence of dynamic characteristics of -Si: HCCD. Theoretical results show that the local distribution of a-Si: H bandgap has a very large effect on the transfer properties of a-Si: HCCD. Moreover, at high frequencies, the band-tail a-Si: H has a greater effect on the a-Si: HCCD transfer than the deep-ground state.