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采用有限元Comsol 4.3a软件对多晶硅定向凝固结晶阶段3个时期(前期、中期、后期)坩埚内硅熔体的流速场进行数值模拟,并与不同磁场强度下的硅熔体流速场进行了对比分析。结果表明,硅熔体的平均流速随着结晶时间的延长而减小,从初期的38μm/s减小到后期的16μm/s,下降了57.89%。施加磁场后,硅熔体的平均流速随着磁场强度的增大而减小:结晶初期、中期和后期,硅熔体的平均流速分别减小了42.11%、58.59%和45.16%。结晶阶段3个时期分别施加磁场强度为0.6、0.4、0.2 T时,磁场对硅熔体的对流抑制作用最为明显。
The flow field of silicon melt in the crucible during the period of directional solidification and crystallization of polycrystalline silicon has been numerically simulated by Comsol 4.3a software and compared with that of silicon melt under different magnetic field intensities analysis. The results show that the average flow rate of Si melt decreases with the increase of crystallization time, decreasing from 38μm / s in the initial stage to 16μm / s in the late stage, decreasing by 57.89%. After the magnetic field was applied, the average flow rate of the silicon melt decreased with the increase of the magnetic field strength. The average flow rate of the silicon melt decreased by 42.11%, 58.59% and 45.16% respectively in the early, middle and later stages of crystallization. During the three stages of crystallization, respectively, the magnetic field exerted the most obvious convection inhibition effect on the silicon melt when the magnetic field intensity was 0.6, 0.4 and 0.2 T, respectively.