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综合考虑纳米硅结构薄膜的特殊性质,如量子限制效应、光学带隙和光跃迁振子强度对纳米硅粒径的依赖特性以及光学带隙和光辐射的温度依赖特性等,给出了一个解析表达式来分析具有一定粒径分布的纳米硅结构薄膜的光致发光(PL)强度分布,其中选取了两种纳米硅的粒径分布,即高斯分布和对数正态分布。结果表明,随着平均粒径和粒径分布偏差的减小,纳米硅薄膜的PL谱峰蓝移。随着环境温度的升高,纳米硅结构薄膜的PL谱峰红移且相对发光强度减弱。纳米硅结构薄膜光辐射拟合的结果与实验数据的比较分析表明,该模型能够很好地解释纳米硅结构薄膜在不同温度下的PL特性。
Considering the special properties of nanostructured silicon thin films, such as the quantum confinement effect, the dependence of optical bandgap and optical transitional oscillator strength on the particle size of nanosilica, the temperature dependency of optical bandgap and optical radiation, an analytical expression The photoluminescence (PL) intensity distribution of nanosilica films with a certain particle size distribution was analyzed. The particle size distributions of two kinds of nanosilica, ie Gaussian distribution and lognormal distribution, were selected. The results show that with the decrease of average particle size and particle size distribution, the PL peak of nanosilver films is blue-shifted. With the increase of ambient temperature, the PL spectrum of the nanostructured silicon thin films red-shifted and the relative luminescence intensity weakened. The results of the fitting of the nano-silicon structure film with the light radiation show that the model can well explain the PL characteristics of the nano-structured silicon film at different temperatures.