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采用接触式紫外光刻和反应离子刻蚀工艺在ZnS衬底上制备二维亚波长结构抗反射表面。在优化的光刻工艺下,以CH4、H2及Ar的混合气体为刻蚀剂,研究了刻蚀工艺对刻蚀速率和刻蚀形貌的影响。结果表明,刻蚀速率随着射频功率的增大线性增大,随着工作压强的增加先增大后减小,随着CH4含量的增大先增大后降低。功率过大会导致刻蚀产物发生二次沉积,CH4流量过高会导致聚合物的生成加剧,这些都会影响刻蚀形貌。最后在优化的刻蚀工艺下制备出了8～12μm波段具有较好的宽波段增透效果的二维亚波长结构。
Two-dimensional sub-wavelength structure anti-reflection surface was prepared on ZnS substrate by contact UV lithography and reactive ion etching. Under the optimized lithography process, the influence of etching process on etching rate and etching morphology was studied by using mixed gas of CH4, H2 and Ar as etchant. The results show that the etching rate increases linearly with the RF power, increases first and then decreases with the increase of working pressure, and then increases with the increase of CH4 content and then decreases. Power over the General Assembly lead to the second deposition of the etch product, CH4 flow rate will lead to higher polymer production, which will affect the etching morphology. Finally, two-dimensional subwavelength structures with a wideband antireflection effect at 8 ~ 12μm were prepared by optimizing the etching process.