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提出了一种低温金属单向诱导横向晶化的多晶硅薄膜晶体管(LT_MIUCpoly_SiTFT)的技术.使用该技术可在大面积廉价玻璃衬底上制备出高迁移率、低漏电电流、具有较好均匀性的多晶硅器件.在进一步的研究中,设计了一种新型的栅控轻掺杂漏区(GM_LDD)结构,有效地解决了在较高源漏电压下的栅诱导漏电问题.使得LT_MIUC poly_SiTFT更适用于高质量的有源矩阵显示器.
A technique of low temperature metal unidirectional induced lateral crystallization polycrystalline silicon thin film transistor (LT_MIUCpoly_SiTFT) is proposed, which can be used to prepare high mobility and low leakage current on large area low cost glass substrates with good uniformity Polycrystalline silicon devices.A new type of gate-control lightly-doped drain region (GM_LDD) structure was designed to solve the problem of gate-induced leakage at high source-drain voltage, which makes LT_MIUC poly_SiTFT more suitable for High-quality active matrix display.