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分子束外延技术(简称MBE)是随着超高真空、表面分析和薄膜生长技术的发展而逐渐成熟的一种新工艺。1968年美国贝尔实验室A.Y.Cho等人为制作深度方向掺杂元素精确控制的超薄平面结构和多层叠加结构膜,第一次提出分子束外延技术。1968年至1974年期间,很多研究工作者在GaAs、GaP衬底上对ⅢⅤ族化合物半导体进行了大量外延生长参数、表面结构和成膜机理等方面的基础实验研究。由于处于探索阶段,曾
Molecular beam epitaxy (MBE) is a new process that matures with the development of ultra-high vacuum, surface analysis and thin film growth technology. In 1968, Bell Laboratories of USA, A.Y. Cho, et al. Proposed the molecular beam epitaxy technology for the first time to fabricate the ultra-thin planar structure and multi-layer superposed structure film precisely controlled by the doping elements in the depth direction. During the period from 1968 to 1974, many researchers carried out fundamental experimental studies on the epitaxial growth parameters, surface structure and film-forming mechanism of the Group III-V compound semiconductors on GaAs and GaP substrates. As in the exploration stage, ever