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本文采用光调制反射光谱(PR),双晶衍射(DCRD),光荧光激发光谱(PL)等技术研究了MBE-GaAs/Si异质结材料GaAs层的应变情况,以及从不同温度快速热退火后GaAs/Si(PR)谱的变化可看出GaAs外延层应变随退火温度增大而增大,GaAs能隙则随之下降,考虑到应力随温度变化因素后这些不同的测试方法所得的结论与(PR)谱结果基本一致。因此用室温光反射调制光谱对于检测室温下GaAs/Si材料的质量,剩余应力等是方便而有力的方法。
In this paper, the strain of GaAs layer in MBE-GaAs / Si heterostructure materials has been investigated by using light modulation reflectance spectroscopy (PR), double crystal diffraction (DCRD) and fluorescence excitation spectroscopy (PL) The change of GaAs / Si (PR) spectra shows that the strain of GaAs epitaxial layer increases with the increase of annealing temperature and the GaAs energy gap decreases. Taking into account the conclusions of these different test methods after stress changes with temperature And (PR) spectrum results are basically the same. Therefore, it is a convenient and potent method to measure the quality of GaAs / Si material at room temperature and residual stress by room temperature light reflection modulation spectroscopy.