论文部分内容阅读
本文用阻抗谱方法研究了Li_(3+x)V_(1-x)T_xO_4(T=Si,Ge)多晶的离子导电性,发现一些工艺条件如成型压强、烧结时间和烧结程序对电导率有很大影响。注意分析了这些影响的物理起因。最佳工艺条件是:在大约8t/cm~2压强下成型样品。在1000℃连续烧结5至6天,烧结过程中,应尽量避免温度波动。在此条件下制备的Li_(3.5)V_(0.5)Ge_(0.5)O_4和Li_(3.3)V_(0.7)Si_(0.3)O_4多晶样品在25℃的离子电导率分别为2.2×10~(-5)Q~(-1)cm~(-1)和1.9×10~(-5)Q~(-1)cm~(-1)。
In this paper, the ionic conductivity of polycrystal Li_ (3 + x) V_ (1-x) T_xO_4 (T = Si, Ge) was studied by impedance spectroscopy. Some process conditions such as forming pressure, sintering time and sintering process were investigated. have a great impact. Note that the physical causes of these effects are analyzed. The optimum conditions are as follows: The sample is formed at a pressure of about 8t / cm ~ 2. Continuous sintering at 1000 ℃ for 5 to 6 days, the sintering process, should try to avoid temperature fluctuations. The ionic conductivities of Li_ (3.5) V_ (0.5) Ge_ (0.5) O_4 and Li_ (3.3) V_ (0.7) Si_ (0.3) O_4 polycrystalline samples prepared at this condition were 2.2 × 10 ~ -5) Q ~ (-1) cm ~ (-1) and 1.9 × 10 ~ (-5) Q ~ (-1) cm ~ (-1) respectively.