The phosphorus-doped ZnO films were prepared on glass substrate by radio-frequency (RF) magnetron sputtering at different temperature. The properties of ZnO films doped with P2O5 respectively with a mass fraction of 0 and 1% were characterized via X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission spectra and room-temperature Hall measurements. The film deposited at room temperature shows more crystallinity with a preferential orientation along c-axis, and exhibits good optical property. XPS analyses indicate most of phosphorus in ZnO:P film form antisite PZn or phosphide compound, resulting in forming a donor state, which is consistent with the result examined by Hall measurement.