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本文采用紊流模型对大直径单晶硅在垂直磁场及勾形磁场作用时熔体内动量及热量输运作了数值模拟。采用有限体积法离散控制方程,采用SIMPLE((Semi-implicit Method for Pressure Linked Equations)算法耦合压力和速度场。对无磁场、垂直磁场及勾形磁场作用下熔体内的传输特性进行了比较。数值计算结果表明,垂直磁场对动量及热量的分布具有双重效应。垂直磁场强度过大,不利于晶体生长。随着勾形磁场强度的增加,熔体内子午面上的流动减弱,并且紊流强度也相应降低。
In this paper, the turbulence model is used to simulate the momentum and heat transport in the melt when the large diameter single crystal silicon is in the action of the vertical magnetic field and the hooked magnetic field. In this paper, the finite volume method is used to control the pressure drop and the velocity field by the SIMPLE (Semi-implicit Method for Pressure Linked Equations) algorithm. The transmission characteristics of the melt in the absence of magnetic field, vertical magnetic field and hooked magnetic field are compared. The numerical results show that the vertical magnetic field has a dual effect on the momentum and heat distribution.The vertical magnetic field strength is too large, which is not conducive to the crystal growth.With the increase of the magnetic field intensity of the hook, the flow in the meridian melt is weakened and the turbulence The intensity is also reduced accordingly.