论文部分内容阅读
本文扼要叙述碲溶剂法生长高质量、组分均匀的碲镉汞晶体的工艺;着重说明本法具有:降低长晶温度,减少爆炸;拉平长晶时的固-液界面,改善晶体径向均匀性和区域提纯而提高晶体本身纯度的作用。本法所生长的晶体结构较完整,晶体中段组分较均匀,晶体中段经一次退火后,在77 K下,电子浓度可达3×10~(14)厘米~(-3),其迁移率可达2×10~5厘米~2·伏~(-1)·秒~(-1)。用这种晶体可制成有较好性能的光导和光伏型红外探测器。
This article briefly describes the technology of tellurium solvent growth of high-quality, homogeneous composition of HgCdTe crystals; emphasize that the law has: to reduce the long grain temperature, reduce the explosion; flattening long grain when the solid-liquid interface to improve the crystal radial uniform Sexual and regional purification and improve the purity of the role of the crystal itself. The crystal structure grown by this method is more complete and the middle part of the crystal is more uniform. After annealing in the middle of the crystal, the electron concentration can reach 3 × 10 ~ (14) cm ~ (-3) at 77 K, the mobility Up to 2 × 10 ~ 5 cm ~ 2 · V ~ (-1) · s ~ (-1). With this crystal can be made with better performance of optical and photovoltaic infrared detectors.