论文部分内容阅读
一、引言窄禁带材料的MOS工艺需要寻找击穿特性合适的、化学稳定性好的高质量介质膜。但是大多数III—V族化合物半导体的原生氧化物化学计量比不稳定,组分不均匀,易水解。因此,近来大量的工作致力于发展与这些半导体的化学性质相适宜的淀积介质膜。低温化学汽相淀积(LTCVD)技术是制备这种介质膜的特别有希望的方法。在InSb单晶衬底上淀积SiO_2得到的化学系统,近来被推荐用于制备红外CCD成象列阵。SiO_2的稳定性、纯度加之工艺简单使这种介质膜颇具吸引力。研究得出的结论是,电性活泼的表面态仍然是因淀积时淀积物与原生氧化物之间的相互作用而引起的。文中采用x射线光电子能谱和较为缓和的化学腐蚀作纵向剖面分布,从而研究考察这种相互作用的化学本质。
I. INTRODUCTION The MOS technology of narrow bandgap materials needs to look for high quality dielectric films with suitable breakdown characteristics and good chemical stability. However, most of III-V compound semiconductors have a stoichiometric ratio of primary oxides that are not stable, have a non-uniform composition and are easily hydrolyzed. Therefore, a large amount of work recently has been devoted to developing a deposited dielectric film suitable for the chemical properties of these semiconductors. Low Temperature Chemical Vapor Deposition (LTCVD) technology is a particularly promising method for preparing such dielectric films. The chemical system obtained by depositing SiO 2 on an InSb single-crystal substrate has recently been proposed for preparing an infrared CCD imaging array. The stability and purity of SiO_2 combined with the simple process make this dielectric film very attractive. The study concluded that the electrically active surface state is still caused by the interaction between the deposit and the native oxide during deposition. In this paper, x-ray photoelectron spectroscopy and more moderate chemical corrosion for longitudinal profile distribution, and thus study the chemical nature of this interaction.