半导体工程师寻找有用的自显影光刻胶已有多年。这种光刻胶可用于半导体加工过程中很少几个阶段,可能节约生产成本。虽然已研究过几种这类材料,但它们都有一种或多种问题,诸如副产品有毒、曝光需要高强度辐照量、化学不稳定性等。用溶剂显影光刻胶的另一些工作者成功地把准分子激光束通过光掩膜投影到半导体上,以获得约1μm的线宽。通常这些实验室规模的工作需要高强度的辐照量和经常在待显影区再沉淀反应物。 Semiconductor engineers have searched for useful self-developing photoresists for many years. This photoresist can be used in semiconductor processing in a few stages, which may save production costs. Although several such materials have been studied, they all have one or more problems, such as toxic by-products, exposure to high intensity exposures, chemical instability, and the like. Other workers developing the photoresist with a solvent successfully projected the excimer laser beam through a photomask onto the semiconductor to achieve a linewidth of about 1 μm. Often these lab-scale work requires high intensity irradiance and often re-precipitates reactants in the zone to be developed.