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氧化时,在氧气中混入少量的HCl气体,能对有害杂质起萃取作用,能抑制硅热氧化堆垛层错的形成,减小漏电流,改善器件击穿特性。然而硅片的表面沾污和切割,研摩及抛光的机械损伤在高温氧化时要产生堆垛层错,从而增加了器件的漏电流和噪声。在APD器件制造工艺中,采用氧化前HCl原位抛光技术,去掉了切割、研摩的机械损伤层和表面污物,而后在同一炉中进行HCl氧化,从而获得高质量的氧化层,使器件的性能进一步改善,而且提高了器件的成品率。
Oxidation, mixed with a small amount of HCl gas in oxygen can play an extraction role of harmful impurities, can inhibit silicon thermal oxidation stacking fault formation, reduce leakage current, improve the breakdown characteristics of the device. However, the silicon surface contamination and cutting, grinding and polishing of mechanical damage in the high temperature oxidation to produce stacking faults, thereby increasing the leakage current and noise of the device. In the APD device manufacturing process, the preoxidized HCl in-situ polishing technique is adopted to remove the mechanical damage layer and the surface dirt of the cutting and grinding and then the HCl oxidation in the same furnace to obtain the high quality oxide layer, Further improve the performance, but also improve the device yield.