Fabrication of 0.3-μm T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organ

来源 :中国科学：物理学、力学、天文学英文版 | 被引量 : 0次 | 上传用户：maruijun

【摘要】

：

我们在场与一个有效多级式的缓冲计划的介绍在 n 类型硅底层上用 Metalorganic 化学蒸汽免职(MOCVD ) 种的一只 InGaAs 变形高电子活动性晶体管(mHEMT ) 。高周波的 0.3-m 门

【作者】

：

TANG ChakWah LAU KeiMay

【机构】

：

DepartmentofElectronicsandComputerEngineering

【出处】

：

中国科学：物理学、力学、天文学英文版

【发表日期】

：

2012年4期

【关键词】

：

化学气相沉积法 MHEMT 有机金属 GAINAS 硅衬底变质 MOCVD生长高电子迁移率晶体管 silicon metamorphic HEMT M

【基金项目】

：

The authors would like to thank Rohm and Haas Electronic Materials LLC for their support of the metal organic precursors, as well as AIXTRON and Laytech for their technical support. This work was supp

下载到本地 , 更方便阅读

下载此文赞助VIP

声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架

论文部分内容阅读

我们在场与一个有效多级式的缓冲计划的介绍在 n 类型硅底层上用 Metalorganic 化学蒸汽免职(MOCVD ) 种的一只 InGaAs 变形高电子活动性晶体管(mHEMT ) 。高周波的 0.3-m 门长度弄空模式 Al0.50In0.50As/Ga0.47In0.53As mHEMT 的制造和性能第一次被报导。用一联合光并且电子横梁影印石版术技术， Si 上的亚微米 mHEMT 设备被完成了。合金得非的欧姆的接触抵抗 R c 象 0.065 公里一样低。直到 761 mS/mm 的最大的跨导被测

其他文献

X-band AlGaN/GaN HEMTs with high microwave power performance

An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal charact

期刊

HEMT器件ALGAN高功率微波X波段高电子迁移率晶体管性能饱和输出功率信号特性GaN high-electron-mobility trans

The effect of electric charge on the mechanical properties of graphene

The effect of electric charge on the mechanical properties of graphene under tensile loading is investigated by using molecular dynamics method.A modified atomi

期刊

电荷储存石墨力学性能分子动力学方法静电相互作用临界断裂应力机械性能载荷作用charge distributionfracture mechan

Optimization of the imaginary time step evolution for the Dirac equation

Taking the single neutron levels of 12C in the Fermi sea as examples,the optimization of the imaginary time step(ITS) evolution with the box size and mesh size

期刊

时间演化步长优化狄拉克方程DIRAC方程网目尺寸收敛速度单粒子能量大肠杆菌Dirac equationSchrdinger-like equ

Lagrangian coherent structures analysis of gas-liquid flow in a bubble column

The objective of this paper is to apply a new identifying method to investigating the gas-liquid two-phase flow behaviors in a bubble column with air injected i

期刊

气液两相流拉格朗日相干结构鼓泡塔结构分析LYAPUNOV指数数值模拟湍流模型bubble columns multiphase flow f

Underwater three-dimensional imaging using narrowband MIMO array

To obtain high cross-range resolution, the underwater 3-D acoustic imaging system usually requires a rectangular array with a great number of sensors and a larg

期刊

线性阵列MIMO三维成像水下窄带计算机模拟显示横向分辨率多输入多输出underwater acoustic imaging 3-D imagi

A trilayer process for the fabrication of AI phase qubits

Herein we develop an Al/AlOx/Al trilayer process,feasible to fabricate complex circuits with wiring crossovers,for the preparation of Al junctions and phase qub

期刊

量子比特宏观量子隧道效应临界电流密度铝氧化铝相干动力学制造三相AIJosephson junction trilayer process

Hole mobility enhancement of Si by rhombohedral strain

紧张技术是改进洞活动性和互补金属氧化物半导体设备性能的一个有效方法。在拉紧的 Si (001 ) 的四角形的紧张导致洞活动性改进被理论和实验的二个方面验证了。在这份报纸，我

期刊

空穴迁移率应变硅SI(001)CMOS器件菱结构转化三方晶系拉伸应力strained Si band structure scatterin

Fracture analysis near the interface crack tip for mode Ⅰ of orthotropic bimaterial

The mechanical behaviors near the interface crack tip for mode Ⅰ of orthotropic bimaterial are researched. With the help of the complex function method and the

期刊

裂纹尖端正交异性双材料界面断裂分析非齐次线性方程组正交各向异性材料奇异性指数interface crack for mode Ⅰstress i

Inverse analysis of thermal conductivities in transient non-homogeneous and non-linear heat conducti

This paper presents a new inverse analysis approach to sensitivity analysis and material property identification in transient non-homogeneous and non-linear hea

期刊

瞬态热传导反分析方法边界元法热导率非线性基础非齐次灵敏度系数parameter identification boundary element

Modification of magnetic properties in SmCo films by controlling crystallization and phase transiti

有高 Sm 集中(37.7at%) 的一系列 Cr/SmCo/Cr 电影被磁控管劈啪作响准备。磁性和水晶结构上的 SmCo 厚度，退火的温度，和退火的时间的效果小心地被学习。结果证明在这些电影的结

期刊

磁特性钴膜薄膜控制结晶相变钐修改退火时间magnetic materials magnetic exchange interaction p

Fabrication of 0.3-μm T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organ

与本文相关的学术论文