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用磁控溅射法在载玻片基底上分别制备W-VO2单层薄膜与ZnO/W-VO2双层薄膜,并在Ar气氛中进行退火。用X射线衍射仪、LCR测试仪、扫描电镜、紫外-可见分光光度计和红外光谱仪对薄膜样品的晶体结构、电阻-温度特性、表面形貌、可见光透过率和红外光透过率进行测试。结果表明:ZnO/W-VO2双层薄膜的相变温度降低至35℃,薄膜生长更加致密均匀,可见光透过率提高约23%,对红外光的屏蔽效果更优。
W-VO2 single-layer thin films and ZnO / W-VO2 double-layer thin films were prepared on glass substrate by magnetron sputtering and annealed in Ar atmosphere. The crystal structure, resistance-temperature characteristics, surface morphology, visible light transmittance and infrared transmittance of the film samples were tested by X-ray diffraction, LCR, SEM, UV-Vis and infrared spectroscopy . The results show that the phase transition temperature of ZnO / W-VO2 double-layer thin film decreases to 35 ℃, the film growth is more dense and uniform, the visible light transmittance is increased by about 23%, and the shielding effect of infrared light is better.