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通过在SOI LIGBT中引入电阻场板和一个p MOSFET结构 ,IGBT的性能得以大幅提高 .p MOSFET的栅信号由电阻场板分压得到 .在IGBT关断过程中 ,p MOSFET将被开启 ,作为阳极短路结构起作用 ,从而使漂移区的过剩载流子迅速消失 ,IGBT快速关断 .而且由于电场受到电阻场板的影响 ,使得过剩载流子能沿着一个更宽的通道流过漂移区 ,几乎消去了普通SOI LIGBT由于衬偏造成的关断的第二阶段 .这两个因素使得新结构的关断时间大大减少 .在IGBT的开启状态 ,由于p MOSFET不导通 ,因此器件的开启特性几乎与普通器件一致 .模拟结果表明 ,新结构至少能增加 2 5 %的耐压 ,减少 6 5 %的关断时间 .
By introducing a resistor field plate and a p MOSFET structure into the SOI LIGBT, the performance of the IGBT is greatly increased. The gate signal of the p MOSFET is voltage-divided by the resistance field plate. During the turn-off of the IGBT, the p MOSFET is turned on as the anode Short circuit structure, so that the drift region of the excess carrier disappears rapidly IGBT fast turn off.Because the electric field by the resistance field plate, so that excess carriers can flow through a wider channel drift region, Almost eliminates the second phase of normal SOI LIGBT turn-off due to liner bias, both of which greatly reduce the turn-off time of the new structure.While the IGBT is on, since the p MOSFET does not conduct, the turn-on behavior of the device Almost in line with common devices.The simulation results show that the new structure can increase at least 25% of the pressure, reducing 65% off time.