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Cd1 - x Znx Te熔体组元平衡蒸汽压数据是晶体制备中必须考虑的重要热力学参数 .在光吸收法测定 Cd- Te熔体平衡蒸汽压的基础上运用热力学关系估算了 Cd1 - x Znx Te熔体的平衡蒸汽压 ,并在所得组元平衡分压下进行了Cd1 - x Znx 合金源控制下的 MVB法熔体生长 Cd0 .8Zn0 .2 Te晶体 ,获得的晶体电阻率为 9.3× 10 9Ω· cm,各方面性能均明显提高 ,可见此热力学估算是精确可行的 .
The equilibrium vapor pressure data of Cd1 - x ZnxTe melt components are important thermodynamic parameters which must be considered in crystal preparation. Based on the determination of the equilibrium vapor pressure of Cd - Te melt by optical absorption method, the thermodynamic relationship of Cd1 - x Znx Te The equilibrium vapor pressure of the melt was obtained. The MVB method was used to melt Cd0.8Zn0.2 Te crystal under the control of Cd1 - x Znx alloy source under the equilibrium pressure of the obtained components. The obtained crystal resistivity was 9.3 × 10 9 Ω · Cm, all aspects of performance were significantly improved, showing that this thermodynamic estimation is accurate and feasible.