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本文首先报道了在清洁的Si(100)表面观察到L_(23)VV的7条Auger精细谱线。经过短时间的电子束退火后又观察到能量为62.8eV和68.1eV两条谱线。前者可以用Si-O系统。L_(23)(Si)L_1(O)O_1(O)的交叉跃迁来解释;后者虽已有报道,但在解释上引起争议。本文根据实验认为它与C在Si表面的吸附有关。
In this paper, we report the first seven Auger fine lines of L_ (23) VV observed on the clean Si (100) surface. After a short period of electron beam annealing and then observed the energy of 62.8eV and 68.1eV two lines. The former can use Si-O system. L_ (23) (Si) L_1 (O) O_1 (O). Although the latter has been reported, it is controversial in its interpretation. According to the experiment, it is related to the adsorption of C on Si surface.