论文部分内容阅读
为了提高半导体激光器的抗辐射性能,满足空间应用的需要,在介绍了空间辐射环境的基础上,对空间辐射在半导体激光器中产生的总剂量效应、单粒子翻转效应和位移效应进行了分析,并探讨了半导体激光器在空间辐射环境中相应的抗辐射防护技术。对980 nm单模半导体激光器采用了端面镀膜、Al2O3绝缘介质层、真空封装等抗辐射的改进措施,有效地提高了半导体激光器的抗辐射能力。
In order to improve the radiation resistance of semiconductor laser and meet the needs of space applications, the total dose effect, single-event flip-flop effect and displacement effect of spatial radiation in semiconductor lasers are analyzed based on the introduction of space radiation environment. The corresponding radiation protection technology of semiconductor laser in space radiation environment is discussed. The 980 nm single-mode semiconductor laser is end-coated, Al2O3 dielectric layer, vacuum packaging and other anti-radiation measures to effectively improve the semiconductor laser radiation resistance.