A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650 °C. The resistivity at room temperature is as high as 7.6 x 106Ω·cm. Significant redistribution of vanadium is not observed even after 1650 °C annealing. Temperature-dependent resistivity and optical absorption of V-implanted samples are measured. The activation energy of vanadium acceptor level is observed to be at about EC - 1.1 eV.