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本文研究了掺A1或掺Ag微粉的聚丙烯（PE）基和聚偏氟乙烯（PVDF）基导电开关型复合材料的受γ辐射效应。发现吸收一定剂量的γ辐射后，材料的开关电压阈值Vk降低。并发现导电开关型复合材料存在三个累积辐射剂量界限：γ0、γ1和γ2。当累积辐射剂量小于γ0，复合材料Vk数值的变化与自然老化相似；当累积辐射剂量大于γ0但小于γ1，材料的开关性能变差，但停止辐射后经历一段时间后可以自行基本恢复；当累积辐射剂量大于γ1但小于γ2，材料的导电开关性能消失；当累积辐射剂量大于γ2后，材料将永久损伤。本文从理论上分析并验证了γ辐射的电离效应和量子隧道效应的叠加作用是产生复合材料上述受辐射效应的主要原因。
In this paper, the effects of γ radiation on polypropylene (PE) -based and polyvinylidene fluoride (PVDF) -based conductive switch-type composites doped with Al or Ag powders were investigated. It is found that the threshold voltage Vk of the material decreases after absorbing a dose of γ radiation. It is found that there are three cumulative radiation dose limits for conductive switch composites: γ0, γ1 and γ2. When the cumulative radiation dose is less than γ0, the change of composite Vk is similar to that of natural aging. When the accumulated radiation dose is greater than γ0 but less than γ1, the switching performance of the material deteriorates. However, after the radiation is stopped for a certain period of time, Radiation dose greater than γ1 but less than γ2, the conductive properties of the material disappeared; when the cumulative radiation dose greater than γ2, the material will be permanently damaged. This paper analyzes and verifies theoretically that the ionization effect of γ radiation and the superposition of quantum tunneling effect are the main reasons for the above radiation effect of the composite material.