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异质结双极晶体管(HBT)利用宽禁带材料作发射区来允许基区重掺杂以减小基区电阻且不降低直流电流增益.基区重掺杂会干扰半导体的能带结构,从而影响器件的光学性质和电学性能.Klausmeier-Brown等通过电学测量已证实:由于基区重掺杂使得注入到AlGaAs/GaAs-HBT基区的电子电流显著增大,其原因归结为由重掺杂引起的禁带变窄使得n_0p_0乘积
Heterojunction bipolar transistors (HBTs) utilize wide bandgap materials as the emitter region to allow for substantial doping of the base region to reduce the base resistance and not to reduce the DC current gain. Base doping can interfere with the semiconductor’s band structure, Thus affecting the optical and electrical properties of the device.Klausmeier-Brown and other electrical measurements have confirmed that: due to the base of heavily doped so that the AlGaAs / GaAs-HBT base area significantly increased the electron current, the reason attributed to the heavy doped The forbidden bands caused by miscellaneous make n_0p_0 product