Hiraki等人已经发表过硅原子在远低于共溶点的温度下从硅单晶中离去并快速地向复盖于其上的Au和Pt膜迁移,实际上在该温度下,当金属淀积时衬底极易扩展。在150～200℃下,只需几分钟在Au样品表面上就可发现SiO_2,只要未形成合金的金一直是纯净的,氧化层将连续地生长。对于Pt,即使在空气环境中形成铂化硅也不会在其表面形成氧化层。与此相反,我们发现铂化硅确实有一层薄的氧化层,这对于在硅表面上制造好的PtSi—Si欧姆接触或肖特基势垒接触是非常重要的。在硅集成电路的工艺流程中,用烧结方法在接触窗口形成硅化物,通常在500～650℃的隋性气氛中烧结几分钟。在绝缘层范围内未反应的Pt使用加热的稀释王水加以剥除;这种硅化物被认为是稳定的。因而被利用来作为金属化导体。在研究用化学汽相淀 Hiraki et al. Have reported that silicon atoms migrate away from the silicon single crystal at temperatures well below the point of solubilization and rapidly migrate to the Au and Pt films overlying it, practically at this temperature when the metal The substrate can be easily expanded during deposition. At 150-200 ° C, SiO 2 can be found on the surface of the Au sample in only a few minutes, as long as the unalloyed gold has been pure and the oxide layer will grow continuously. For Pt, an oxide layer is not formed on the surface even if it is formed in an air atmosphere. In contrast, we found that the siliconized silicon does have a thin oxide layer, which is very important for making good PtSi-Si ohmic or Schottky barrier contacts on the silicon surface. In the process of a silicon integrated circuit, a silicide is formed on the contact window by a sintering method, usually for several minutes in an inert atmosphere of 500-650 ° C. Unreacted Pt within the area of ​​the insulating layer is stripped using heated diluted aqua regia; this silicide is considered to be stable. It is used as a metallized conductor. In the study using chemical vapor deposition