首次在“原生态”中(而不是在富汞气氛下)经过一般的生长后退火处理,获得了具有低载流子浓度和高载流子迁移率的n型Hg_(1-x)Cd_xTe外延层。这一成就是基于:等温生长时,只要用一定组分的源材料在一定温度下就能长出具有特定组分和最佳电学性质的Hg_(1-x)Cd_xTe外延层。而且这些外延层呈现出镜面般的表面状态,其组分无论径向或轴向(深度达到大约15微米)都是很均匀的。 For the first time in the “Protozoa” (but not in a mercury-rich atmosphere), after general growth and annealing, an n-type Hg_ (1-x) Cd_xTe epitaxy with low carrier concentration and high carrier mobility Floor. This achievement is based on the fact that the isothermal growth of Hg_ (1-x) Cd_xTe epitaxial layers with specific composition and the best electrical properties can be achieved by using certain components of the source material at a certain temperature. Moreover, these epitaxial layers exhibit a mirror-like surface condition, the composition of which is uniform both radially and axially (up to a depth of about 15 microns).