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本文主要讨论ＺｎＣｄＴｅ－ＺｎＴｅ多量子阱激子线的均匀增宽和非均匀增宽效应。实验所有样品为常压ＭＯＣＶＤ系统在ＧａＡｓ（１００）衬底上生长的含３０个周期的ＺｎＣｄＴｅ－ＺｎＴｅ多量子阱材料。做光致发光实验时用配有ＲＣＡ－Ｃ３１０３４型光电倍增管的Ｓｐｅｘ１４０４型双光栅单色仪及Ｂｏｘｃａｒ４４００型平均取样系统来检测。用Ｎ２激光器的３３７．１ｎｍ线作激发光源对Ｚｎ０．６７Ｃｄ０．３３Ｔｃ－ＺｎＴｅ多量子阱做光致发光实验，样品的近带边有两个发光谱峰分别位于５７４．４ｎｍ和５９８．６ｎｍ处。它们分别是激子跃迁和导带电子到受主跃迁的发光峰。为使这类材料的器件达最佳应用状态，室温下的激子共振宽度应尽量地窄。激子共振宽度由非均匀增宽和均匀增宽决定的。低温下激子光谱的半高全宽比导带电子到受主跃迁谱的半高宽小很多，但随温度升高激子线宽增加很快。激子谱线的均匀线宽部分主要是通过激子与ＬＯ声子作用实现的。根据声子占有数方程，随温度升高ＬＯ声子数增加，所以激子散射时间缩短，线宽增加。这种行为已在半导体材料中被充分证明。所以均匀线宽随温度的升高而增加，非均匀线宽部分近似与温度无关。在低温下（大约低于５．０Ｋ）均匀，线宽比非均匀线?
This article focuses on the uniform broadening and non-uniform broadening of ZnCdTe-ZnTe MQW excitons. Experimental All samples were 30 cycles of ZnCdTe-ZnTe MQW material grown on a GaAs (100) substrate using a normal pressure MOCVD system. The photoluminescence experiments were performed using a Spex1404 double grating monochromator equipped with an RCA-C31034 photomultiplier tube and an average sampling system, Boxcar 4400. The photoluminescence of Zn0.67Cd0.33Tc-ZnTe multi-quantum well was investigated by using an N2 laser 337.1nm as excitation light source. Two peaks near the edge of the sample were located at 574.4nm and 598.6nm, respectively. They are respectively the exciton transition and the conduction band electrons to the acceptor transition luminescence peak. In order to achieve the best application state of the devices of such materials, the width of excitons resonance at room temperature should be as narrow as possible. The exciton resonance width is determined by non-uniform widening and uniform widening. The full width at half maximum of the exciton spectrum at low temperature is much smaller than the full width at half maximum of the conduction band electron, but the exciton line width increases rapidly with temperature. The uniform line width of the exciton line is mainly achieved by the action of excitons and LO phonons. According to the phonon possession equation, the LO phonon number increases with temperature, so the exciton scattering time is shortened and the linewidth is increased. This behavior has been well documented in semiconductor materials. Therefore, the uniform line width increases with increasing temperature, and the non-uniform linewidth is approximately independent of temperature. At low temperature (about less than 5.0K) uniform, the line width than the non-uniform line?