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研究了在AgGaS2晶体生长石英坩埚内壁镀碳的工艺,包含了镀碳温度、镀碳时间及冷去时间对碳膜质量的影响,从而获得了最佳镀碳工艺,即采用高纯甲烷在1040℃的高温下,热解60min,并冷却12h。采用该工艺镀碳的石英坩埚解决了AgGaS2晶体在高温下与石英坩埚的粘连问题,防止了坩埚杂质向晶体中的扩散,生长出表面光滑,完整性好,大尺寸的AgGaS2晶体。
The process of plating carbon on the inner wall of AgGaS2 crystal growth quartz crucible was studied. The effect of carbon deposition temperature, carbon deposition time and time on the carbon film quality was studied. The optimal carbon deposition process was obtained, that is, ℃ high temperature pyrolysis 60min, and cooled 12h. The quartz crucible which is plated with carbon in the process solves the problem of the AgGaS2 crystal sticking to the quartz crucible at high temperature, prevents the diffusion of the crucible impurities into the crystal, and has the advantages of smooth surface, good integrity and large size AgGaS2 crystal.