论文部分内容阅读
设计了一款用来偏置增强型和耗尽型A类低噪声放大器的电源芯片,通过自动校准外接放大器的栅压使其漏端电流保持恒定。芯片在温度、电源、工艺变化时实现了良好的偏置稳定性,并且避免了这些变化导致的放大器RF性能的退化。测试结果表明,它提供的漏压范围为4~12 V;漏电流范围为20~200 m A;漏电流随数字电源的变化率为0.79%、随温度的变化率为0.022%;漏电压随温度的变化率为0.07%。芯片内部集成负压电荷泵电路偏置耗尽型放大器,产生-2.45 V的电压。芯片使用0.25μm BCD工艺制造,面积为16 mm×1.6 mm。
A power chip designed to bias enhanced and depleted Class A LNAs is designed to maintain a constant drain current by automatically calibrating the gate voltage of the external amplifier. The chip achieves good bias stability at temperature, power supply, process variations and avoids degradation of amplifier RF performance due to these changes. The test results show that the leakage current is in the range of 4 to 12 V, the leakage current is in the range of 20 to 200 m A, the leakage current with digital power is 0.79%, and the rate of change with temperature is 0.022% The rate of change of temperature is 0.07%. The chip integrates a negative charge pump circuit bias depletion amplifier, producing a voltage of -2.45V. The chip is fabricated using a 0.25μm BCD process and has an area of 16 mm × 1.6 mm.