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研究了调制掺杂 Alx Ga1 - x N/Ga N表面 Pt肖特基接触的制备工艺 ,并对其进行了 I-V测量。通过改变对样品表面的处理工艺 ,研究了表面处理对调制掺杂 Alx Ga1 - x N/Ga N表面 Pt肖特基结接触特性的影响 ,在 n型掺杂浓度为 7.5× 1 0 1 7cm- 3的 Al0 .2 2 Ga0 .78N样品表面 ,制备得到了势垒高度为 0 .94e V、理想因子为 1 .4的 Pt肖特基接触。这与国外报道的结果接近 (=1 .2 e V,n=1 .1 1 [1 ] )
The preparation of Pt Schottky contact doped with Alx Ga1 - x N / Ga N was studied and the I-V measurements were carried out. The effect of surface treatment on the contact characteristics of Pt Schottky junction formed on Alx Ga1 - x N / Ga N surface was investigated by changing the treatment process on the surface of the sample. When the n - type doping concentration was 7.5 × 10 17 cm -3, 3 Al0.22Ga0.78N sample surface, the preparation of a barrier height of 0.94eV, the ideal factor of 1.4 Pt Schottky contact. This is close to the result reported abroad ( = 1.2 eV, n = 1.1.1 [1])