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设计并利用LP－MOCVD生长了InGaAsP/GaAs分别限制单量子阱结构，采用无铝的InGaP做光学包层。腔面未镀膜情况下，测试10支条宽100μm，腔长1mm的激光器样品，连续输出功率超过1W，阈值电流密度为330～490A/cm2，外微分量子效率为55％～78％，中心发射波长为(808±3)nm。
InGaAsP / GaAs were designed and grown by using LP-MOCVD to limit the structure of single quantum well respectively. InGaP without Al was used as optical cladding. When the cavity surface is uncoated, 10 samples of laser with 100μm wide and 1mm cavity length are tested. The output power is over 1W, the threshold current density is 330 ~ 490A / cm2, the external quantum efficiency is 55% ~ 78% The wavelength is (808 ± 3) nm.