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提出了一种用于集成电路内部的过热保护电路 .采用 0 .6 μm n阱互补金属氧化物半导体 (CMOS)工艺的spectre仿真结果表明 ,此电路对因电源电压、工艺参数变化而引起的过热保护阈值点漂移有很强的抑制能力 .通过引入反馈的方法解决了过热保护电路中热振荡带来的危害
An overheat protection circuit for integrated circuit is proposed.The specter simulation results of a 0.6 μm n-well CMOS (Complementary Metal Oxide Semiconductor) process show that the circuit is sensitive to overheating caused by variations in power supply voltage and process parameters Protection threshold point drift has a strong inhibitory ability by introducing the feedback method to solve the overheat protection circuit thermal shock hazard